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This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT, in the 650 V class. The devices are first compared using their respective datasheets. The test circuit is introduced and hard switching tests under inductive load are performed to reveal the switching performance of the devices. The differences...
Wide band gap devices (e.g. Silicon Carbide, Gallium Nitride, etc.) provide significant opportunities for the power electronics industry. Compared to silicon, they have faster switching frequencies, better heat dissipation, and can operate at higher temperatures. But, WBG devices pose several challenges in terms of their packaging. This paper details the need for a co-design and simulation approach...
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