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In this paper, the electrical and material properties of CuMn/silicon oxide (SiO2) and CuMn/tantalum (Ta)/SiO2 were investigated, and an optimized concentration of Mn in the CuMn alloy as barrier layers in these two structures was also determined. CuMn alloy ($0\sim 10$ atomic % Mn) deposited on SiO2 and Ta were used in this paper. A diffusion barrier layer self-formed at the interface during annealing,...
We have investigated diffusion barrier properties of atomic layer deposited iridium (Ir) thin film as a function of thermal treatment temperature. Up to the temperature of 500°C, Ir thin film maintained its initial stage without penetration of Cu layer into Si through Ir layer. Thermal stability of Ir layer up to 500°C was supported by HR-TEM and XRD measurement results. On the other hand, Ir layer...
As the manufacture of most crystalline silicon solar cells involves various high temperature processes, a good thermal stability of the surface passivation is essential. In this paper we demonstrate the thermal stability of the c-Si surface passivation by atomic layer deposited Al2O3 during a firing process as applied for screen printed solar cells. The initial outstanding surface passivation quality,...
We have studied the influence of Si surface on damage generation and recombination using classical molecular dynamics simulations. We have found that, when approaching to the surface, damage generation is enhanced due to weaker atomic bonding. Furthermore, generated damage is more stable as it reveals the mean lifetime of defects and the activation energy for recombination. Therefore near the surface...
The electrical characterization of ZrO2-based MIS structures fabricated by ALD on SiO2/Si substrates with monocyclopentadienyls of zirconium, ZrCp(NMe2)3, as precursors was carried out. These precursors combine the beneficial properties related to the high thermal stability of the Cp compounds with the high growth rate and tendency of forming high permittivity cubic or tetragonal ZrO2 phases of the...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
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