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The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400??C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the...
The expanding thermal plasma (ETP) is a novel plasma technique currently used by several solar cell manufacturers for the deposition of silicon nitride antireflection coatings on (multi-) crystalline silicon solar cells. In this paper we will show that the ETP technique is versatile and can be used for the deposition of silicon nitride, silicon dioxide and hydrogenated amorphous silicon with a good...
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