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This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel. The...
We report the demonstration of 55 nm gate length strained n-channel field-effect transistors (n-FETs) having an embedded Si1-xGex structure that is beneath the Si channel region and which acts as a strain-transfer structure (STS). The Si1-xGex STS has lattice interactions with both the silicon source and drain regions and with the overlying Si channel region. This effectively results in a transfer...
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