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Step instabilities on Si(111) vicinal surface and Si(111) vicinal surface induced by Au adsorption were observed by reflection electron microscopy. On the Si(001) vicinal surface faceting of (001) surface due to surface reconstruction takes place and surface steps are bunching. The kinetics of mass transport of Si depends on the substrate temperature and steps are impermeable for Si adatoms at lower...
The technique of differential voltage contrast (DVC) measurement was developed in our laboratory several years ago. The viability of DVC measurement for determining parameters such as doping profiles has been clearly demonstrated. In this paper, we use DVC to study differences in doping profiles on CZ silicon photo-diodes using two well known surface processing methods. KOH etched wafers showed almost...
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