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Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in...
Design parameters, including transistor width and number of stacked stages, contribute to the efficiency of RF scavenging systems. This leads to a large design space and, as a result, designing optimal RF scavenging circuits for a given performance requirement is a difficult problem. This work presents an analytical model based on the physical design parameters of the power matched Villard voltage...
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