The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigated breakdown (BD) characteristics of sub-cooled liquid nitrogen (SLN2) using a sphere-to-plane electrode configuration for different pressures (0.1–0.3 MPa) and temperatures (65–77 K) of SLN2. BD voltage of SLN2 was measured repeatedly under ac voltage application. Experimental results quantitatively revealed that how much BD voltage increased with the increase in gap length and pressure,...
This paper deals with the influence of external factors (temperatures from -200degC to 200degC, radiation by high speed neutrons and thermal neutrons in controlled dosage) and working conditions on the stability of GFSA characteristics. Under well controlled laboratory conditions measurements of DC and pulse breakdown voltages were performed. During these measurements, following parameters were varied:...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
In this paper, the method of Spatial Fourier Transform has been used to investigate the pattern formation dynamics in a dielectric barrier discharge (DBD) system. With this method, patterns formed in the DBD system can be transformed into smooth frequency spectrum. The frequency constitution of discharge pattern can be analyzed. In our experiment mixed gas of 96% Ar and 4% air at 0.9 atm is used as...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
The electrical breakdown processes in synthetic polymers have been actively investigated these decades. However, their details have not yet been fully understood. Recently, the authors have developped a system for measuring a pre-breakdown current and tried to clarify the mechanism of a breakdown from pre-breakdown currents in polymeric insulators [1-4]. In the previous paper [2], we found that a...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.