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Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
In the following paper we present a complete analytical model that predicts the band-gap (Eg) of single-walled carbon nanotubes (SWCNTs) directly from their diameter (d) and chiral angle (thetas). The proposed analytical model is based on two mathematical expressions that have been derived by curve-fitting the outcome generated from the third-nearest-neighbor tight-binding (TB) method in conjunction...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
The SrTiO3 and Y-doped SrTiO3 polycrystalline sintered bodies were synthesized by the polymerized complex (PC) process and the subsequent hot pressing at 1473 K for 1 h or at 1673 K for 2 h in Ar atmosphere. The X-ray diffraction patterns of the SrTiO3 and Sr0.9Y0.1TiO3 samples synthesized by the PC process and hot pressing at 1473 K showed that these samples were mostly composed of the SrTiO3 single...
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