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Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
In this paper, the processes associated with the electrodeposition of Selenium on Au substrates from nitric acidic solutions were investigated by combined electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measurements. The analyses reveal that H2SeO3 in the solution is firstly adsorbed on the surface of Au electrode during cathodic polarization and subsequently reduced to Se...
The effect of Li additon on the superconducting properties of Bi2Sr2CaCu2Ox thick and thin films was investigated. Bi2Sr2CaCu2Ox superconducting films were successfully obtained at low temperatures below 840??C by addition of Li2C03, which acted as a flux. The superconducting transition temperature (Tc) of films increases with increasing Li content, accompained by an increase in the c-axis lenghth...
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