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Novel ultra-high frequency device using graphene on pentacene (GOP) structure is proposed. In the GOP, charges transfer from graphene with high mobility to pentacene with low mobility by gate voltage and then the charges in pentacene are transferred to the graphene by electronic polarization. In this case, it is expected that the charges repeat the high and low mobility states, and the current shows...
We report graphene field-effect transistors on hexagonal boron nitride, high-k, and polymeric films featuring state-of-the-art electrical and mechanical properties on flexible substrates. The record electrical performance includes the highest ON current (∼0.3mA/μm), the first demonstration of current saturation on flexible films and intrinsic gain, and the highest conversion gain flexible graphene...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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