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Dense (1010 cm-2) quantum dots (QDs) were grown in inverted pyramidal recesses by OMCVD. The high uniformity of the QD arrays is demonstrated by micro-photoluminescence spectra having linewidth as small as 6.5 meV and AFM measurements.
GaNxAs1-x thin films had been successfully grown on semi-insulating GaAs (001) substrates by metal organic chemical vapour deposition (MOCVD) method. The precursors used were trimethylgallium (TMGa), dimethylhydrazine (DMHy), and tris-dimethylaminoarsenic (TDMAAs). GaNxAs1-x thin films of 1.2-2.4 mum thick were grown at the total reactor pressure of 50 torr, H2 and N2 flow rate of 300 sccm, temperatures...
The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
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