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To realize the theoretical advantages of Quantum Dots (QDs) as the active region for diode lasers, the selective growth of QDs on patterned substrates were investigated. The substrate nanopatterning and QD formation was realized by diblock copolymers combined with selective MOCVD growth. Using a CF4 reactive ion etch (RIE) and a sacrificial SiNx mask, diblock copolymer nanopattern was transferred...
Dense (1010 cm-2) quantum dots (QDs) were grown in inverted pyramidal recesses by OMCVD. The high uniformity of the QD arrays is demonstrated by micro-photoluminescence spectra having linewidth as small as 6.5 meV and AFM measurements.
Lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots (QDs) are demonstrated. Straight linear InAs QD arrays are formed by self- organized anisotropic strain engineering of an InGaAsP/InP (10 0) superlattice template in chemical beam epitaxy. The QD emission wavelength at room temperature is tuned into the important 1.55 mum telecom wavelength region...
We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6/spl mu/m is observed along with first-excited state lasing at /spl lambda//spl sim/1.34 /spl mu/m.
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