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Simultaneous switching noise (SSN) is an important issue for the design and test and actual ICs. In particular, SSN that originates from the internal logic circuitry becomes a serious problem as the speed and density of the internal circuit increase. In this paper, an on-chip monitor is proposed to detect potential logic errors in digital circuits due to the presence of SSN. This monitor checks the...
The soft-error vulnerability of flip-flops has become an important factor in IC reliability in sub-100-nm CMOS technologies. In the present work the soft-error rate (SER) of a 65-nm flip-flop has been investigated with the use of alpha-accelerated testing. Simulations have been applied to study the flip-flop SER sensitivity in detail. Furthermore, an easy-to-use approach is presented to make an accurate...
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
As mainstream processing technology advances into 65 nm and beyond, many factors that were previously considered secondary or insignificant, can now have an impact on chip timing. One of these factor is inversed temperature dependence (ITD). As supply voltage continues scaling into sub-IV territory, delay-temperature relationship can be reversed on some cells, meaning that device switching time may...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
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