The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the switching performance of a six-pack SiC MOSFET module (CCS050M12CM2) is investigated experimentally using a standard double pulse test method. The upper three and the lower three MOSFETs of the CCS050M12CM2 are paralleled forming a half-bridge configuration. Moreover, the performance comparison of the CCS050M12CM2 is carried out with a pin to pin compatible Si IGBT module (FS75R12KT4_B15)...
This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normally on 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region. The hole current is increasing the charge in the space charge region and the gradient of electrical field increases. A higher gradient of electrical field with the same switching speed causes...
Large scale production of single-electron transistors (SETs) is now possible with a standard fully-depleted SOI process. Although the operating temperature is limited to approximately 10 K for now, this opens new opportunities for implementing on-chip hybrid designs combining the benefits of Coulomb blockade with regular FET-based electronics. Moreover, the continuous shrinking of CMOS devices tends...
This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is...
in the paper method of automatic measurements of non-equilibrium depletion relaxation in MIS structures was offered. Simple relaxation process model based on assumption of infinite capacitance of inversion layer was proposed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.