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With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
This paper performs static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI). The static characterization performed includes acquisition of output characteristics, transfer characteristics, specific on-state resistances, threshold...
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