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A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used...
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