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Si/SiGe heterostructure bipolar transistors (HBT) were fabricated and compared to Si homojunction transistors with the same doping levels. Low-temperature Si-MBE was used to form the heterojunction and the homojunction layer sequences. One HBT structure has a graded-gap base layer, where the Ge fraction is 20% at the emitter side and linearly graded to 0% toward the collector side. This gives an average...
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