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Si-SiGe heterojunction bipolar transistors (HBTs) have been fabricated with their complete layer structure grown by MBE without interruption. The maximum measured transit frequency f/sub T/ was 91 GHz and f/sub max/ reached 65 GHz. These are the fastest silicon transistors reported to date in terms of both f/sub T/ and f/sub max/ figures.<<ETX>>
A novel design for Si/SiGe double-barrier resonant tunnelling devices is presented. The active, monocrystalline zone is embedded in polycrystalline material. The poly region consists of the same layer sequence as the active region. Both regions are deposited simultaneously by means of so-called differential molecular beam epitaxy. The I/V curve of the novel device shows a strong and a weak resonance...
Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is less than 70 nm. The current gain of the SiGe-base device is 20 at room temperature and increases with...
The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime (<550 degrees C). The lowest epitaxial temperature achieved was 140 degrees C. Results on matrix growth, metastability of strained-layer SiGe, and doping are given, and the structure and characteristics of two...
The first operational BICFET (bipolar-inversion-channel field-effect transistor) structures based on the Ge/sub x/Si/sub 1-x//Si system have been demonstrated. The 300 K current gains of beta >300 are believed to be the highest values reported for a BICFET in any material system to date. The device structure, fabrication, and electrical performance are presented. It is concluded that due to its...
Si/SiGe heterostructure bipolar transistors (HBT) were fabricated and compared to Si homojunction transistors with the same doping levels. Low-temperature Si-MBE was used to form the heterojunction and the homojunction layer sequences. One HBT structure has a graded-gap base layer, where the Ge fraction is 20% at the emitter side and linearly graded to 0% toward the collector side. This gives an average...
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