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We demonstrate flip-flop operation using the directional bistability in ultra-small microdisks (7.5 μm diameter) heterogeneously bonded on a silicon chip. The pulse energies are only 1.8 fJ and the bias current is 3.5 mA.
This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at wavelength 1.3 and 1.55 μm. Lπ and VπLπ is minimized at a greater applied voltage. Operating at 1.55 μm is proven to be more efficient in terms of length...
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption.
This paper reports on the co-fabrication of RF MEMS radial contour mode resonators and photonic whispering gallery mode disk resonators on the same SOI substrate. By mechanically coupling the MEMS and photonic resonators, we have demonstrated a silicon acousto-optic modulator (AOM) which can modulate a 1550 nm laser at 288 MHz. An output RF power of -83.7 dBm is observed corresponding to a modulation...
Presents a collection of slides covering the topic of silicon photonics. The slides cover silicon as an optical material and its significant usage in silicon photonics and other optics areas.
We report on the design of a silicon-based 2D slab photonic crystal that operates around telecommunication wavelength (1550 nm). The design uses a honeycomb lattice and achieves a complete photonic bandgap (PBG) for transverse-magnetic (TM) polarized light while preserving a connected pattern for efficient electrical injection. The device operation is based on a dynamic shift of the complete photonic...
This study demonstrates photon pair generation (PPG) through third order nonlinear interaction between a silicon straight waveguide (Si-w) and a pulsed beam. The experiment is performed in a continuous regime, to avoid any synchronization between detectors and laser and to allow for much cheaper laser sources. Results show that the flux of generated pairs and the signal-to-noise ratio are limited...
Since silicon is the dominating material in current integrated circuit industry, fabricating microspheres on a Si-based substrate contributes to compact and low-cost photonics for mass-market applications. The authors present a technique applying the homogenized KrF excimer laser reformation to fabricate crystalline Si spheres on the SOI platform.
Packaging of optoelectronic devices has always been a bottleneck for mass production. Today, it is still the case for silicon photonics devices. Intrinsically, the technology of silicon nanowires integrated onto SOI electronic integrated circuits allows the same kind of cost reduction as the one encountered in the microelectronic industry. However, smart solutions have to be proposed in order not...
We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
In this paper, we review recent results of high-speed silicon photonic modulators based on electrical-field-induced carrier depletion effect in a silicon-on-insulator waveguide. We also present detailed design, fabrication, and characterization of a photonic integrated circuit on a silicon platform. We demonstrate an aggregate data transmission rate of 200 Gb/s with 8 channels wavelength division...
We evaluated a large birefringence of 0.85 in a SOI layer by totally analyzing the measured index and theoretical and experimental dispersion characteristics of Si photonic wires. It was applied to an ultracompact polarization-insensitive AWG.
We evaluated a large birefringence of 0.85 in a SOI layer by totally analyzing the measured index and theoretical and experimental dispersion characteristics of Si photonic wires. It was applied to an ultracompact polarization-insensitive AWG.
We review recent results of silicon photonic component research and photonic integration on silicon platform. In particular, we present design, fabrication, and characterization of a high-speed photonic integrated circuit that is capable of transmitting data at 200 Gb/s.
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