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Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin...
Heteroepitaxy SiGe on Si by liquid phase epitaxy (LPE) is a potential material for photovoltaic application. The Si0.05Ge0.95 solar cell with an energy gap of 0.72 eV can lead to a 7 percentage point increase in the Si-based multi-bandgap system or any multi-bandgap system that contains Si as the 1.1 eV solar cell. In this initial work we report first growth SixGe1-x with 0.5<x<1 on Si substrate...
We present first results on the application of PECVD silicon carbide as intermediate layer for crystalline silicon thin-film solar cells. Silicon carbide layers were deposited by PECVD and characterized by Auger spectrometry and SEM. The subsequent sample processing included high-temperature anneal, deposition of a silicon seeding layer by CVD, recrystallization of the seeding layer by zone-melting,...
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