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High open circuit voltage (VOC) is a potential benefit of thin silicon solar cells. A new thin silicon solar cell structure is proposed using silicon-on-insulator (SOI) technology that investigates the properties of high voltage in thin silicon designs with an epitaxial emitter. Key design parameters are low rear and front surface recombination, low dark current and efficient light trapping. We propose...
N-type thin-film polycrystalline-silicon solar cells were fabricated on alumina substrates. The polycrystalline silicon material was made by overdoping of AIC seed layers with phosphorus atoms followed by epitaxial thickening with low-pressure chemical vapor deposition (LPCVD) at 1000??C. The cells have i/p+ amorphous Si heterojunction emitters and show an average VOC of 455 mV, an average JSC of...
Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin...
Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of 25 /spl mu/m thickness on p+ seeding layer. The cells with p+ seeding layer of 10 /spl mu/m to 50 /spl mu/m thickness were fabricated. The highest efficiency of a cell is 12.95%, with Voc=633 mV, Jsc=26.5 mA/cm/sup...
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