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Epitaxial growth of GaP on a Si substrate with a GaInP interlayer by a low-pressure metalorganic chemical vapor deposition were investigated using the atomic force microscopy. The surface roughness Ra was decreased from 2.7 nm to 1.3 nm by only inserting the GaInP interlayer under the 600°C. The GaP layer using the GaInP interlayer was optimized under various growth temperature between 500°C and 650°C...
High efficiency multijunction solar cells are usually grown on expensive III-V or germanium semiconductor substrates. Growing thin layers of III-V semiconductors on a low cost silicon substrate can reduce the cost. The low lattice constant mismatch between gallium phosphide (GaP) and Si (0.37%) is favorable for epitaxial growth. In this paper, we will demonstrate that gallium phosphide has been epitaxially...
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