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We have improved in-plane uniformity of crystal shape for InGaAs micro-discs using a multi-step growth in micro-channel selective-area metal-organic vapor phase epitaxy on Si(111) substrates. The multi-step growth employs a gas flow sequence in which the partial pressure of a Ga source is modulated to control the initial nucleation and the growth mode. At the initial stage of growth, we grew InAs...
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