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In this paper, Si Schottky-barrier diodes (SBD's) fabricated in CMOS process are shown to be suitable for THz imaging applications. We firstly present a physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Secondly, the developed transmission Line (TL) model are employed to optimize T-type matching...
Modeling parasitic parameters of Through-Silicon Via (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circuits and interconnections in three-dimensional (3D) Integrated Circuits (ICs). This paper presents a complete set of self-consistent equations including self and coupling terms for capacitance of general multi-TSV structures. The...
A wide-band lumped element model for a through silicon via (TSV) is proposed based on electromagnetic simulations. Closed form expressions for the TSV parasitics based on the dimensional analysis method are introduced. The proposed model enables direct extraction of the TSV resistance, self-inductance, oxide capacitance, and parasitic elements due to the finite substrate resistivity. The model's compactness...
This paper proposes an equivalent lumped element model for various multi-TSV arrangements and introduces closed form expressions for the capacitive, resistive, and inductive coupling between those arrangements. The closed form expressions are in terms of physical dimensions and material properties and are driven based on the dimensional analysis method. The model's compactness and compatibility with...
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