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A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong...
This work presents a new analytical model to predict power losses and waveforms of high-voltage silicon SuperJunction (SJ) MOSFETs during hard-switching operation. This model includes original features accounting for strong capacitive non-linearities and displacement currents. Moreover, these features demand unusual extraction of electrical characteristics from regular datasheets. The high accuracy...
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