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Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is less than 70 nm. The current gain of the SiGe-base device is 20 at room temperature and increases with...
Si/SiGe heterostructure bipolar transistors (HBT) were fabricated and compared to Si homojunction transistors with the same doping levels. Low-temperature Si-MBE was used to form the heterojunction and the homojunction layer sequences. One HBT structure has a graded-gap base layer, where the Ge fraction is 20% at the emitter side and linearly graded to 0% toward the collector side. This gives an average...
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