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Today more and more multifunction RF-SIP (System-In-Package) modules, in SMD (Surface-Mount-Technology) package style, come into high volume production phase. There are many challenges in automatic RF measurements of RF-SIP-SMD devices. Each different SIP must have dedicated load-board that contains multiple RF connectors as well as a rigorous RF considerations and design. Furthermore, RF test equipment...
A modeling concept for accurate prediction of 1/f-noise in millimeter wave Schottky detectors is presented. The concept is based on DC bias current measurements with precise knowledge of the diode structure. Key aspect is the distinction between DC and RF current distribution at the Schottky contact, specifically investigated on a quasi vertical diode structure.
The estimation of 1 dB compression and third-order intercept points can be obtained after the cross-correlation between dynamic current and output voltage of radio frequency power amplifiers. Estimation is performed using power measures and not power inferred from voltage measures. The underlining theory and a correlator that allows implementing this measurement on-chip are presented. The trade-off...
This paper highlights the achievement of constant efficiency (power added efficiency, PAE) across wide output power levels for fixed amplitude constant envelope modulation. Power amplifier drain supply is adjusted while having a fixed load impedance network. Input RF drive to the power amplifier has to change according to the output power in order to maintain the PAE across a wide range of power levels...
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