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In a recent article, the author discussed the growing importance of process-related variability and stress-induced reliability in electronic devices and how it complicates the design of complex IC predicated on transistors of identical characteristics. Various circuit techniques developed to address these variability and reliability issues were also discussed. In this article, I continue the discussion...
The use of a vertical thin film transistor (VTFT) topology in the flat panel active matrix array, opens up a plethora of new high performance applications. The VTFT is small in footprint by virtue of its stacked layer configuration, in which channel lengths can be conveniently scaled down to nanometer regime without having to resort to photolithography as would otherwise be needed when scaling lateral...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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