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We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching...
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FinFET, we have successfully demonstrated...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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