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The sizes of Ge island on Si(111) surface corresponding to introduction of misft dislocation were determined by modeling. The critical thickness of pseudomorphic Ge layer was demonstrated to be 2 bilayers with lateral island size exceeded 60 nm when creation of misft dislocations became energy-favorable.
With device scaling, the introduction of emerging materials including nanowires and nanodots is required more than ever. We present several examples of making nanomaterials based on advanced thin film deposition techniques including atomic layer deposition, supercritical fluid deposition (SCFD), and selective epitaxial growth (SEG), and nanohybrid process utilizing self-assembled nano-template. Metallic...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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