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We show NBTI delay degradation considering variations in a 65 nm process. We evaluate these two models. The homogeneous degradation model (HDM) assumes that NBTI degradation is constant at any variation and the inhomogeneous degradation model (IDM) assume that it is larger at the fast condition. In the usual logic gates on ASICs, delay degradation becomes much smaller on IDM. Circuit design guardbands...
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