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The insulated-gate bipolar transistor (IGBT) has a parasitic thyristor. Latch-up can occur when the current density exceeds a particular current density. Conventional methods employed to increase the latching current density will lead to some other performance degradations. To overcome these problems and further increase the latching current density of IGBT, a novel IGBT with a floating N-doped buried...
Generally there are two kinds of IGBT model. They are Hefner and model macro model. The Hefner model is made up of a mosfet and a pnp. It is difficult for parameter extraction. The macro model is made up of some capacitors and a current source. However when the IGBT work as a power switch, the IGBT switches between cut-off area and saturated area. Its behavior is not the same as a current source....
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