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Transparent conductive electrodes (TCEs) are ubiquitous and essential for photonic devices like solar cells, touchscreens and photodetectors. An increasing demand for TCEs may be met with graphene, which promises low production cost and an abundance of raw material and may enable flexible optoelectronic devices [1,2]. We report amorphous silicon (a-Si:H) multispectral photodetectors with a bias-tunable...
Two approaches, graphene stack (GS) structure assembled by layer-by-layer (LBL) transfer and trap assistant technique for single-layer graphene (SLG), are applied to field-effect transistors (FETs) for photodetection. In LBL-GS-FET, about 3.6 times increased photocurrent (PC) together with increased internal/external quantum efficiency (IQE/EQE) is obtained compared to the conventional SLG-FET, owing...
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