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This paper presents the design of an integrated inductor with AMS CMOS 0.35 mum technology. This inductor is designed to ensure the wide band LNA circuit implementation on silicon. This inductor is designed with a coplanar transmission line. This line type achieves an inductance value of 0.38 nH on the whole operating frequency band from 2 to 6 GHz.
We present design aspects and techniques for millimeter-wave circuits implemented in 65-nm CMOS. Different transmission line topologies are discussed and measurement results for a conventional coplanar waveguide and slow-wave coplanar waveguide implemented in 65-nm CMOS are shown. The attenuation of the on-chip transmission lines can be reduced by using slow-wave coplanar waveguides. A 1-stage cascode...
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