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Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs...
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