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This paper describes the first demonstration of a 76 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA microwave monolithic IC (MMIC) was fabricated by using AlGaN/GaN FET with a maximum oscillation frequency of 160 GHz and a breakdown voltage of over 50 V. For reducing transmission loss, we used a CPW line on the silicon substrate with low transmission loss of 0.5 dB/mm...
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