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Thin films of semiconducting SnO2 were deposited by using RF sputtering technique under 30% oxygen and 70% argon in the reactive (Ar+O2) gas mixture using a metallic tin (Sn) target at 16 mTorr deposition pressure. The SnO2 thin film deposited at optimized sputtering conditions was found to be highly sensitive (sensing response ~1.4 × 104) to NO2 gas (10 ppm) at comparatively low operating temperatures...
Resistance characteristics of thin film sensors based on uncoated SnO2, SnO2 with CuO overlayer and SnO2 with CuO dotted clusters are compared in three different backgrounds of air, oxygen and vacuum. Measurements for the three sensor configurations are carried out as a function of temperature. The novel dispersal method of CuO catalyst in the form of dotted clusters is seen to enhance the oxygen...
Post-treatment of the sensing film in tin oxide gas sensor arrays is widely used to improve the selectivity in gas recognition applications. This letter describes the characterization study of an integrated tin oxide gas sensor array chip in which the sensing films are modified using metal additives and ion implantations. Measurement results reveal that metal additives present a higher impact on the...
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