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Junction temperature is of great importance to safe operating area of IGBT modules. Various information of the IGBT operating state is reflected on electrical characteristics during turn-on transient. A unified extraction method for internal junction temperature via dynamic thermo-sensitive electrical parameters (DTSEP) during turn-on transient is proposed. Two DTSEP, turn-on delay time (tdon) and...
In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed. First, a theoretical model of the transient collector current during turn-<sc>off</sc> process is developed in terms of the behavior...
Article presents results of study to determine temperature coefficient of voltage of IGBT. Values of temperature coefficient of voltage obtained at different values of collector current in high conductivity state. Conclusions are made on impact of changes in temperature coefficient of voltage with change of collector current of converter operation in AC electric drive.
IGBT modules suffer from ageing due to thermal and power cycling. Bond wire lift-off or solder layer degradation are the known failure mechanisms. For condition monitoring, an estimation of the junction temperature during operation is necessary. For this purpose, an analog measurement board consisting of simple components is presented. The turn-off delay time is evaluated for temperature estimation...
Junction temperature of insulated gate bipolar transistors (IGBTs) plays an important role in power semiconductor devices reliability. However, it is difficult to have direct access to the chip to obtain the junction temperature. This paper provides a new approach to extract the junction temperature by using combined thermo-sensitive electric parameters (TSEPs) during turn-off transient due to the...
The safe and continuous operation of the power switches of the inverter units is vital in assisting the functioning of the inverter units. This paper proposes an algorithm for the condition monitoring and prognosis of wire-bond fault in an IGBT- extensively used power switch in inverter systems. The proposed algorithm employs both on-state collector emitter voltage and collector current in the estimation...
Thermal cycling is one of the main sources of aging and failures in power electronics. A possibility to reduce the stress to semiconductors is to control the amount of losses that occur in the device during operation. This work presents an active thermal controller that aims at reducing the junction temperature variations in the case of variable power profile. The switching frequency of the converter...
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