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Article presents results of study to determine temperature coefficient of voltage of IGBT. Values of temperature coefficient of voltage obtained at different values of collector current in high conductivity state. Conclusions are made on impact of changes in temperature coefficient of voltage with change of collector current of converter operation in AC electric drive.
Junction temperature of insulated gate bipolar transistors (IGBTs) plays an important role in power semiconductor devices reliability. However, it is difficult to have direct access to the chip to obtain the junction temperature. This paper provides a new approach to extract the junction temperature by using combined thermo-sensitive electric parameters (TSEPs) during turn-off transient due to the...
The safe and continuous operation of the power switches of the inverter units is vital in assisting the functioning of the inverter units. This paper proposes an algorithm for the condition monitoring and prognosis of wire-bond fault in an IGBT- extensively used power switch in inverter systems. The proposed algorithm employs both on-state collector emitter voltage and collector current in the estimation...
The internal gate resistor RGi of an IGBT power module is the most promising temperature sensitive electrical parameter for real-time junction temperature measurement in a working voltage source inverter. This paper investigates RGi-based junction temperature measurement and compares it with the widespread UCE-method that is used for device characterization in laboratory setups. It is found that both...
This paper proposes a method to measure the junction temperatures of insulated-gate bipolar transistors (IGBTs) during the converter operation for prototype evaluation. The IGBT short-circuit current is employed as the temperature-sensitive electrical parameter (TSEP). The calibration experiments show that the short-circuit current has an adequate temperature sensitivity of 0.35 ${\rm A}/^{\circ}\hbox{C} $...
During operation steep lateral temperature gradients evolve in IGBT power semiconductor chips. The influence of these lateral gradients on the measurement of the virtual junction temperature by means of the widely used VCE(T)-method was investigated. In particular we address the question, how the obtained single temperature value is connected to the temperature distribution of the chip. A combination...
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