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SRAM area is expected to exceed 90% of overall chip area because of the demand for higher performance, lower power, and higher integration. To improve memory density, memory bitcells are scaled to reduce their area by 50% each technology node. High density SRAM bitcells use the smallest devices technology, making SRAM more vulnerable for variations. This variations influence the stability of SRAM...
For the static random access memories (SRAMs) with high-\(k\) /metal gate transistors, positive bias temperature instability (PBTI)-induced stability degradation can be significant. In this letter, we analyze the temporal variations of the READ/WRITE operations and static noise margin of a conventional 6T-SRAM cell using a physics-based PBTI model. We show that the dependence of BTI effects on intrinsic...
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