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A large-signal nonlinearity compensation technique is developed to improve the linearity of RF GaN power amplifiers. The design of a high power amplifier employing both common-source (CS) and common-gate (CG) GaN high-electron mobility transistors is presented for the IEEE 802.11p standard. The power amplifier is fabricated in 0.25-$\mu \text{m}$ GaN-on-SiC technology and occupies 1.7 mm $\times1.2$ ...
Low-frequency, baseband effects in Power Amplifiers can become particularly important when steps are taken to improve operational efficiency through the application of `envelope' based approaches such as Envelope Elimination and Restoration (EER) and Envelope Tracking (ET). The aim of this paper is to demonstrate how a broadband modulated time-domain measurement system, when used in combination with...
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