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In this paper we present a quick and easy method for producing relatively large areas of substrate that enhance the Raman effect, using standard semiconductor processing techniques such as reactive ion etching of silicon and electron beam metal deposition. As standard cleanroom processes are used, it is possible to narrowly control the parameters of the fabrication process to create silicon nano-pillars...
Si nanowires suitable for MOS transistors used for large area display applications have been fabricated. They were grown using vapor-liquid-solid (VLS) growth. All important characteristics of the nanowire are controlled. The wire diameter is controlled by patterning the substrate prior to the wire growth. Over 99% of the nanowires grow in the <111> direction vertical to the <111> substrate...
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