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The 5-nm-thick HfO2 film doped with 35 mol% Gd2O3 (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (100)-oriented GDH during the deposition has been investigated and shows that a two-dimensional (2D) single crystalline GDH grows with a smooth surface. The in-plane...
We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline...
Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron-covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch...
In this paper, we demonstrate a novel method to integrate photonic crystals (PhCs) on GaN-based blue light-emitting diodes (LEDs) using a silicon substrate as a mold for forming the PhCs. This method starts with fabricating a 2D grooved Si substrate as that mold. Subsequently, GaN-based epitaxial layers are grown on the Si mold-substrate, which effectively reduces the dislocation density in GaN by...
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