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In this work, we propose a novel packaging concept for highly-integrated RF systems using a magnetically aligned Z-axis anisotropic conductive adhesive. We demonstrate the ability to ldquogrowrdquo interconnects allowing for multilayer packages that are not sensitive to the height between pads. Using this effect we introduce two approaches to integrating multiple silicon wafers on top of each other,...
With the demands of miniaturized solutions that are able to handle increased heat dissipation, the use of silicon substrates with through-silicon vias (TSV) in electronics modules becomes more and more interesting. Shorter signal path, better cooling of tracks, better impedance control and smaller foot-prints are some of the advantages. This also avoids some RC delays of long, in-plane interconnects...
In this paper, we show the electrical characteristics of TSV (through silicon via) depending on structural parameters such as TSV pitch, TSV height, TSV size and thickness of SiO2 for DC leakage blocking between TSV and silicon substrate, and material parameter of silicon substrate such as silicon resistivity in case of single silicon substrate. And we also show X-talk characteristics of two TSVs...
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