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In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
Epitaxially grown PMN-PT thin films using the PMN-PT single crystal targets were prepared at 550??C on appropriate buffer layers of LSCO/CeO2/YSZ deposited on a Si substrate using pulsed laser deposition. The micro-structural and the electrical properties of the films were investigated as a function of the film thickness. The PMN-PT films with the thickness from 20 to 600 nm exhibited an epitaxial...
The optical and electrical characteristics of zinc oxide (ZnO) films grown by molecular-beam epitaxy (MBE) on Si substrates were investigated. ZnO epitaxial layer was successfully grown on nitridated Si(100) substrate initially covered with high-temperature GaN and low-temperature ZnO double buffer layers using MBE. X-ray diffraction and photoluminescence results both indicated that a reasonable quality...
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