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We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
Hybrid thin-film solar cells are fabricated on the glass substrate using ZnO nanorods, well-aligned single-crystalline Si nanowires (SiNWs), and poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) as well as micro-structured III-V semiconductors . The effect of introducing a solution-processed fullerene as an electron transport layer on the polymer/ZnO nanorod array composite...
We present new fundamental insights into the nucleation and evolution of InAs nanowires (NWs) grown using organo-metallic vapor-phase epitaxy (OMVPE), the correlation of their room temperature transport behavior with their structural properties, and a novel scheme for their integration to Si substrates. We experimentally distinguish, for the first time, two NW growth regimes defined by the direction...
In this report, we show experimental results on the growth and characterization of InP nanowires (NWs) grown on silicon and SrTiO3 substrates by solid source molecular beam epitaxy (SSMBE) using Au-assisted catalytic growth. Our objective is to study the effect of a thin crystalline oxide template on the nucleation and growth orientation of the InP NWs. Various growth parameters such as growth temperature...
Critical diameter of nanowires (NWs) grown on a lattice-mismatched substrate by MOCVD was experimentally determined to be inversely dependent on mismatch. Quantization effect is observed with narrow and blue-shifted micro-photoluminescence for InP NWs on Si.
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