The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Extremely compact low-loss 4 channel arrayed waveguide grating with 147??92 ??m2 device size was demonstrated using ultrahigh index contrast InGaAsP photonic wire waveguides on Si, compatible for the monolithic integration of high-performance III-V CMOS transistors.
InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized.
We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mum-thick platelet lasers with cleaved facets, microscale pick and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.