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4μm wide copper Through Silicon Vias (TSV) were processed on underlying 65nm CMOS devices and circuits in order to evaluate the impact of the three-dimensional (3D) integration process. Electrical tests on isolated MOSFET and ring oscillators in the presence of TSVs are compared to modeling results. Beside TSV mechanical impact, an electrical coupling between TSV and MOSFET is experimentally quantified...
A TCAD-based simulation approach is proposed to study the impact of transient coupling that occurs within a generic 3D integration on 65 nm technology based CMOS devices. This coupling is mainly due to signals applied on redistribution layer (RDL) and through-silicon vias (TSV). These both 3D-inherent metal structures may cause variations on normal operating conditions of advanced devices. Influence...
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