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In 1991, M. Bruel (1) invented and patented the Smart Cut technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal layer from one wafer to another: implantation of gaseous ions in a single crystal wafer, direct bonding on a stiffener and splitting (Fig 1). The invention of this SOI process combined with the entrepreneurship...
Design consideration for an 80 nm channel length SOI MOSFET employing double step buried oxide (DSBO) is presented. The electrical characteristics and temperature distribution are analyzed and compared with conventional silicon-on-insulator (C-SOI) MOSFETs. The DSBO devices are shown to have better leakage and subthreshold characteristics. Furthermore, the channel temperature is reduced during high-temperature...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
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