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Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with...
We report on the fabrication and characterization of Ge solar cells on glass realized by layer transfer and epitaxial regrowth. These devices exhibit typical conversion efficiency exceeding 2.4% under AM1.5 irradiation and maximum efficiency of 3.7% under concentrated excitation. This approach enables flexible and affordable multi-junction engineering for solar energy conversion.
We report on pn Ge solar cells grown on Ge substrates and transferred onto glass by wafer bonding. They perform similarly to cells on the native Ge substrate, whereas their energy conversion efficiency compares well with state-of-the-art stand alone Ge photovoltaic cells. We propose Germanium layer transfer and wafer bonding for the realization of effective multi-junction solar cells and versatile...
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct...
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